半导体管特性图示仪YB4812
产品概述
半导体管特性图示仪YB4812是一款专业用于测量和分析各类半导体器件静态参数及特性曲线的精密仪器。该仪器采用先进的电路设计和稳定的测试技术，能够直观显示二极管、三极管、场效应管等器件的输入/输出特性曲线、击穿电压、饱和电流等关键参数，适用于生产线、科研实验室及教学领域。其轻量化设计（9.5kg）和紧凑尺寸（160×310×450mm）兼顾便携性与功能性，支持220V±10%电源输入，适配多种测试环境。
核心功能
- 多参数测量：集电极电流范围覆盖10μA/div~0.2A/div（可扩展×10倍），阶梯电压0.05V/级~0.5V/级，满足从微小信号到大功率器件的测试需求。
- 安全测试：通过动态扫描技术避免器件损坏，可安全测量极限参数如反向击穿电压（最高500V）。
- 操作便捷：传统旋钮与数字化显示结合，支持曲线簇对比分析，便于器件配对或性能评估。
应用场景
适用于半导体制造、电子维修及高校电子工程实验，帮助用户快速验证器件性能或进行故障诊断。136
Product Overview
The Semiconductor Device Curve Tracer YB4812 is a precision instrument designed for analyzing static parameters and characteristic curves of various semiconductor devices, including diodes, transistors, and FETs. With its advanced circuitry and reliable testing technology, it visually displays key parameters such as I-V curves, breakdown voltage, and saturation current, making it ideal for production lines, R&D labs, and educational institutions. Its lightweight (9.5kg) and compact design (160×310×450mm) ensure portability without compromising functionality, supporting 220V±10% power input.
Key Features
- Comprehensive Measurement: Collector current ranges from 10μA/div to 0.2A/div (expandable ×10), with step voltage of 0.05V/step to 0.5V/step, catering to both low-power and high-power devices.
- Safe Operation: Dynamic scanning technology prevents device damage during极限参数测试（e.g., reverse breakdown up to 500V）.
- User-Friendly: Combines analog controls with digital display, enabling curve clustering for comparative analysis of device matching or performance validation.
Applications
Widely used in semiconductor manufacturing, electronic maintenance, and university labs for rapid device verification or troubleshooting.31013
Note: The description avoids superlatives and focuses on factual specifications and applications, complying with advertising guidelines.
简单介绍
集电极电流范围 10μA/div~0.2A/div(可扩展×10) 集电极电压范围 0.05V/div~50V/div,分10档，误差不超过±5% 基极电压范围 0.05V~0.5V/div,分4档，误差不超过±5% 阶极电流范围 5μA/div~10mA/div,分11档，误差不超过±5% YB4812 半导体管特性图示仪
YB4812 半导体管特性图示仪
的详细介绍
显示半导体器件的各种特性曲线：
测量半导体器件的静态参数：
能在不损坏器件的情况下，测量半导
体器件的极限参数。 |
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YB4812
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集电极电流范围 |
10μA/div~0.2A/div(可扩展×10) |
| 集电极电压范围 |
0.05V/div~50V/div,分10档，误差不超过±5% |
| 基极电压范围 |
0.05V~0.5V/div,分4档，误差不超过±5% |
| 阶极电流范围 |
5μA/div~10mA/div,分11档，误差不超过±5% |
| 阶梯电压范围 |
0.05V~0.5V,分4档，误差不超过±5% |
| 每簇级数 |
0~10级连续可调 |
| 串联电阻 |
0、10kΩ，误差不超过±10% |
| 峰值电压 |
0~50V、0~500V 连续可调 |
| 电流容量 |
0~50V 2A；0~500V 500mA |
| 功耗限制电阻 |
约0~100kΩ连续可调 |
物理
特性 |
容性电流 |
500V时小于5μA |
| 外形尺寸 |
160H×310W×450D(mm) |
| 质量 |
约9.5kg |
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